The domain of Infrared (IR) detectors encompasses a variety of technologies that detect in different spectral bands, for a variety of applications such as land, air, naval, space, missile guidance and drones. IR detectors are key drivers to increase detection, recognition, and identification (DRI) ranges and thus to improve the global efficiency of the system in terms of situation awareness and targeting. IR technology is an important element of the EU technological sovereignty in key value chains. In this regard, the European Defence Technological and Industrial Base (EDTIB) faces a threefold challenge in the field of optronic detectors: achieving high performance, maintaining international competitiveness, and securing non-dependency of supply chains. It is key to continue supporting the development of the next generation of IR detectors.

The performance of the IR detector modules is driven not only by the Photon Detector Array (PDA) but also by the silicon Read-Out Integrated Circuit (ROIC), both composing the Hybrid Focal Plane Array (HFPA). Each unit cell of the detector array is coupled to the readout cell by means of flip-chip bonding. The main purpose of the readout cell is to extract the photocurrent from the detector cell and process the signal.

As early as 2019, experts identified gaps in the availability of advanced ROIC technology at EU level, which should be necessary to fulfil the targeted performance requirements of future defence systems. This subject became the focus of the call topic EDF-2021-SENS-R-IRD with the objective to invite the EU IR detector providers to collaborate and qualify together an advanced complementary metal–oxide–semiconductor (CMOS) node in a EU foundry allowing to design ultra-small pitch ROICs interfacing with different detector technologies and allowing digital 2D and 3D architectures.

Collaboration between the main EU IR detector providers is strictly required. Access to advanced CMOS nodes available on 12’’/300mm silicon foundries indeed requires heavy budget allocation, which can be barely achieved at individual Member State level. Therefore, the cost of access to an advanced CMOS node needs to be shared amongst the primary EU players. Furthermore, the limited volumes necessary for defence applications can be much better addressed through EU collaboration.

This call topic contributes to the STEP objectives, as defined in STEP Regulation, in the target investment area of deep and digital technologies.

The proposals must further address the advance in the development of the next generation of ROICs for IR detectors considering the EU supply chain and comprising prototyping and testing. This next generation of ROIC should be based on an advanced silicon technology (compatible with a 3D architecture) that can be used in various future cooled and uncooled IR detector architectures.